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| MBT2907ADW Dual General Purpose Transistor PNP+PNP Silicon 3 2 1 65 4 1 4 5 6 2 3 PNP+PNP SOT-363(SC-88) Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -60 -60 -5.0 -600 Unit Vdc Vdc Vdc mAdc Thermal Characteristics Characteristics Total Device Dissipation TA=25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Symbol PD R JA TJ,Tstg Max 200 625 -55 to +150 Unit mW C/W C Device Marking MBT2907ADW=2F Electrical Characteristics Off C har acter istics (TA=25 C Unless Otherwise noted) Symbol Min Max Unit Characteristics Collector-Emitter Breakdown Voltage(2) (IC=-10mAdc.IB=0) Collector-Base Breakdown Voltage (IC=-10 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE=10 uAdc, IC=0) Base Cutoff Current (VCE=-30 Vdc, VEB =-0.5 Vdc) Collector Cutoff Current (VCE=-30Vdc, VEB=-0.5Vdc) 1. Device Mounted FR4 glass epoxy printed circuit board using the minimun recommended footprint. 2. Pulse Test:Pulse Width<300uS, Duty Cycle<2.0% = = V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX -60 -60 -5.0 -50 -50 Vdc Vdc Vdc nAdc nAdc - WEITRON http://www.weitron.com.tw MBT2907ADW Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit On Characteristics DC Current Gain (IC= -100uAdc, VCE=-10Vdc) (IC= -1.0 mAdc, VCE= -10Vdc) (IC= -10 mAdc, VCE= -10Vdc) (IC= -150 mAdc, VCE= -10Vdc) (IC= -500 mAdc, VCE= -10Vdc) Collector-Emitter Saturation Voltage (IC= -150 mAdc, IB= -15mAdc) (IC= -500 mAdc, IB= -50mAdc) Base-Emitter Saturation Voltage (IC= 150 mAdc, IB= 15 mAdc) (IC= 500 mAdc, IB= 50 mAdc) VCE(sat) HFE 75 100 100 100 50 300 -0.4 -1.6 -1.3 -2.6 Vdc - VBE(sat) Vdc Small-signal Characteristics Current-Gain-Bandwidth Product (IC= -50 mAdc, VCE= -20 Vdc, f=100MHz) Output Capacitance (VCB= -10 Vdc, IE=0, f=1.0MHz) Input Capacitance (VEB=-2.0 Vdc, IC=0, f=1.0MHz) fT Cobo Cibo 200 MHz pF pF 8.0 30 Switching Characteristics Turn-On Time Delay Time Rise Time Turn-Off Time (Vcc= -30 Vdc, Ic= -150 mAdc, IB1= -15 mAdc) t off td tr toff 45 10 40 100 ns WEITRON http://www.weitron.com.tw MBT2907ADW 200 30 20 C , C AP AC ITAN C E (pF ) Cibo PD , POWER DISSIPA TION (mW) 150 10 100 50 5.0 Cobo 0 0 25 50 75 100 125 150 175 TA , AMBIENT T EMPERATURE (C) 200 1.0 -0.1 -1.0 REVERSE -10 VOLT S (V) -30 FIG.1 Max Power Dissipation vs Ambient Temperature FIG.2 Typical Capacitance V OLTAGE (V) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 I C = 1mA I C = 10mA I C = 100mA I C = 30mA I C = 300mA V CE , C OLLECT OR-EMITTER 0.01 0.1 1 10 100 I B , BASE CURRENT (mA) FIG.3 Typical Collector Saturation Region WEITRON http://www.weitron.com.tw MBT2907ADW 0.6 IC = 10 IB 1000 V CE = V5 T A = 150C V CE(SAT) , C OLLECTO R T O EMITTER SA TURATION VOLTAGE (V) 0.5 0.4 hFE , DC CURRENT GAIN (NORMALIZED) 100 T A = 25C T A = - 50C 0.3 T A = 150C T A = 25C 0.2 10 0.1 T A = -50C 1 1 10 100 1000 I C , COLLECTOR CURRENT (mA) 0 1 10 I C , COLLECT OR 100 C URRENT (mA) 1000 FIG.4 Collector Emitter Saturation Voltage vs Collector Current FIG.5 DC Current vs Collector Current 1.0 V OLTAGE (V) 1000 V CE = 5V T A = -50C V CE = 5V fT , GAIN BANDWIDTH PRODUCT (MHz) 100 0.9 0.8 0.7 0.6 V BE(ON) , BASE EMITTER 100 T A = 25C 0.5 0.4 0.3 0.2 0.1 1 I C , COLLECT OR 10 CURRENT (mA) T A = 150C 10 1 1 10 I C , COLLECTOR CURRENT (mA) 100 FIG.6 Base Emitter Voltage vs Collector Current FIG.7 Gain Bandwidth Product vs Collector Current WEITRON http://www.weitron.com.tw MBT2907ADW SOT-363 Package Outline Dimensions A Unit:mm SOT-363 6 5 4 BC 1 2 3 D E H K J L M Dim A B C D E H J K L M Min Max 0.10 0.30 1.15 1.35 2.00 2.20 0.65 REF 0.30 0.40 1.80 2.20 0.10 0.80 1.10 0.25 0.40 0.10 0.25 WEITRON http://www.weitron.com.tw |
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